发明名称 |
SEMICONDUCTOR DIFFUSION PROCESS |
摘要 |
<p>A method of manufacturing a semiconductor device in which a layer of polycrystalline material having a high impurity concentration is used prior to the diffusion of a thin region having a strong surface concentration and prior to providing a contact to the said region. The polycrystalline layer is comparatively thick prior to the diffusion and is reduced in thickness before the metal contact is provided. Application: the manufacture of bipolar transistors for very high frequencies and integrated circuits with multilayer wiring.</p> |
申请公布号 |
CA1075371(A) |
申请公布日期 |
1980.04.08 |
申请号 |
CA19770271098 |
申请日期 |
1977.02.04 |
申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
DE BREBISSON, MICHEL |
分类号 |
H01L29/73;H01L21/225;H01L21/28;H01L21/285;H01L21/3213;H01L21/331;H01L21/768;(IPC1-7):01L21/22 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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