发明名称 SEMICONDUCTOR DIFFUSION PROCESS
摘要 <p>A method of manufacturing a semiconductor device in which a layer of polycrystalline material having a high impurity concentration is used prior to the diffusion of a thin region having a strong surface concentration and prior to providing a contact to the said region. The polycrystalline layer is comparatively thick prior to the diffusion and is reduced in thickness before the metal contact is provided. Application: the manufacture of bipolar transistors for very high frequencies and integrated circuits with multilayer wiring.</p>
申请公布号 CA1075371(A) 申请公布日期 1980.04.08
申请号 CA19770271098 申请日期 1977.02.04
申请人 N.V. PHILIPS'GLOEILAMPENFABRIEKEN 发明人 DE BREBISSON, MICHEL
分类号 H01L29/73;H01L21/225;H01L21/28;H01L21/285;H01L21/3213;H01L21/331;H01L21/768;(IPC1-7):01L21/22 主分类号 H01L29/73
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