| 摘要 |
<p>PURPOSE:To remove stain produced at the time of mounting and avoid shortcircuiting, by providing a processed layer having high etching speed on the surface of an element prior to the mounting of a composite semiconductor element on a stem by means of waxing, and operating etching after the mounting. CONSTITUTION:Si pellets 1, in which PN junction is formed, are laminated by using wax 2, and thereby composite semiconductor element 3 is formed. Next, the exposed surface of element 3, after being etched, is fixed to Au-plated stem 4, which is to become a lower electrode, by using Au-Si eutectic metallic wax 5. On its upper part is fitted upper electrode 6 by using wax 5 again. When this is done, the PN junction may likely be shortcircuited by a flow of wax 5 as the wetting with respect to wax 5 on the element surface has increased due to the etching before the mounting. For this reason, layer 7, such as a processed or diffused layer, having high etching speed, is provided on the surface of element 3 before the mounting, and after the mounting, layer 7, together with unwanted wax 5, is removed, and thereby the surface is cleaned.</p> |
