| 发明名称 |
Semiconductor storage cell |
| 摘要 |
A programmable nonvolatile FET storage cell comprising crosswise to the ribbonlike source region as well as to the drain region a ribbonlike reading electrode and a separate ribbonlike writing electrode. Both electrodes are disposed upon a gate insulator layer into which a storage medium is embedded which is common to both electrodes.
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| 申请公布号 |
US4196441(A) |
申请公布日期 |
1980.04.01 |
| 申请号 |
US19780903359 |
申请日期 |
1978.05.05 |
| 申请人 |
ITT INDUSTRIES INC |
发明人 |
ADAM, FRITZ G |
| 分类号 |
H01L27/112;G11C16/04;H01L21/8246;H01L21/8247;H01L29/417;H01L29/51;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/112 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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