| 摘要 |
A temperature change detector comprising a heat sensitive semiconductor switching device (heat sensitive thyristor) and which switches when a temperature of an element whose temperature is to be detected is changed by a specific value with respect to the ambient temperature. A variable impedance element such as a thermistor or a diode whose resistance is varied depending upon the ambient temperature is connected between the P gate terminal and the cathode terminal of the heat sensitive thyristor which is thermally coupled to the element whose temperature is to be detected, whereby the effect of the ambient temperature on the switching temperature characteristic of the heat sensitive thyristor is compensated.
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