发明名称 |
METHOD OF DIVIDING SEMICONDUCTOR WAFERS |
摘要 |
A method of dividing semiconductor wafers, wherein a masking layer is applied to a surface of the semiconductor wafer and the wafer is cut by means of an etching solution applied to the masked surface. The method includes the step of vaporizing a metal layer consisting of chromium onto the semiconductor wafer to form the masking layer.
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申请公布号 |
US3634161(A) |
申请公布日期 |
1972.01.11 |
申请号 |
USD3634161 |
申请日期 |
1968.07.26 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH. |
发明人 |
RIGOBERT SCHIMMER;HORST GESING |
分类号 |
H01L21/00;H01L21/308;H01L21/78;(IPC1-7):H01L7/00;H01L7/50 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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