发明名称 MANUFACTURING SEMICONDUCTOR
摘要 PURPOSE:To facilitate sticking of a silicon substrate and a ceramic substrate by forming an Au-Si eutectic layer in a simple way by putting Si into an Au layer formed on a main surface of an insulating substrate. CONSTITUTION:Au paste which contains Si is screen-printed or dotted on the recess of a ceramic substrate 1, a metal layer 2 containing Si is formed, and the substrate 1 is sintered at a specified temperature, thereby an Au-Si eutectic layer 3 is formed on the recess of the substrate 1. At this step, the mixing ratio of Au powder and Si is specified at 1 to 4% in weight, and the residue of glass contained in the paste is avoided at the surface of the recess. A semiconductor element pellet 4 is placed on the layer 2 which is formed by this method, and is subjected to heat treatment at a specified temperature, thereby the pellet 4 is fixed through the Au-Si eutectic layer 3. Thus, sticking of the silicon substrate 1 and the pellet 4 is facilitated by the Au- Si eutectic layer 3.
申请公布号 JPS5544705(A) 申请公布日期 1980.03.29
申请号 JP19780116558 申请日期 1978.09.25
申请人 发明人
分类号 H01L21/52;H01L21/58 主分类号 H01L21/52
代理机构 代理人
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