| 摘要 |
PURPOSE:To reduce a noise level caused by a dark current and improve an S/N ratio, by reducing the dark current in a storage region where signal carriers are stored and extending the period during which signals can be stored. CONSTITUTION:A silicon oxide film 21 is formed as an insulating film on the surface of a P-type silicon substrate 1, electrodes 35-37n are formed on the film 21 by polysilicon or aluminum 3; with the electrode 37n as a transfer electrode, the electrode 36 as a shift electrode which moves a signal electron group from the electrode 35 to the electrode 37n or vice versa, and the electrode 35 as a storage electrode which stores the electron group. n-Regions 61 and 62 whose conductive type is opposite to that of the substrate 1 is formed in the region other than the part of surface region under the electrode 35, and in the region under the electrode 37n. Then, a voltage, which is large in the negative side against the boundary-inversion critial voltage or the storage region, is applied, and minority carrier holes are injected to the boundary between the region 61 and the film 21, thereby the generation of a dark current in the vicinity of the boundary is prevented. |
