| 摘要 |
PURPOSE:To obtain well reproductive and flattened diffusion front by using Cd as P-type diffusion impurity to III-V compound including In and diffusing under phosphorus vapor pressure in thermal equilibrium with CdP2. CONSTITUTION:In an impurity diffusion temperature, diffusion processing is made under phosphorus vapor pressure in the range between a phosphorus vapor pressure in thermal equilibrium with CdP2 as upper limit and a phosphorus vapor pressure in thermal equilibrium with Cd3P2 as lower limit. Namely, under this condition Cd is diffused into III-V compound including In as III group element. For that purpose, an impurity diffusion source 1 consisting of Cd3P2 and III-V compound substrate 2 containing In are enclosed into a quartz ampoule and a quartz rod 3 of th end thereof is melted and source 1 is diffused by closed tube method. At this time, by determining phosphorus vapor pressure particullarly, very shallow diffusion layer can be obtained and diffusion front becomes even. |
