| 摘要 |
A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region and means for transporting majority carriers in the first region to the third region.
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