| 摘要 |
<p>PURPOSE:To prevent the production of defects of patterns owing to foreign matter deposited on the mask surface by covering the pattern surface with a transparent coating layer of the specified thickness thereby forming the exposure mask by a project alignment system. CONSTITUTION:A transparent coating layer 1b of about 10-100mu is provided on patterns 1c whereby an exposure mask 1 is formed on a substrate 1a for exposure mask provided with the patterns 1c to be transferred to a substrate (wafer) (Fig. a). At the time of exposure by a project aligner, the light having passed through the pattern 1c of the mask 1 is reflected by an optical system 2 and forms a real image 5 on the substrate (wafer) coated with photoresist but there is the transparent coating layer 1b on the patterns 1c and therefore the image of deposited froeign matter 4 cannot be accurately formed on the substrate, whereby the production of defects of the patterns owing to the foreign matter 4 is prevented (Fig. b).</p> |
