| 摘要 |
PURPOSE:To obtain stable gate film, by forming a polycrystalline Si layer on a high melting point metal film, and producing a heat-oxidized film on the high melting point film by heat-oxidizing this layer. CONSTITUTION:Polycrystalline Si film 20 is coated on the entire surface of a base so as to cover No.1 transfer electrodes 16, 16. Next, by inserting base 11 into an oxidizing atmosphere, a part of the surface of film 20 is oxidized, and No.2 gate film 17, consisting of heat-oxidized film, is formed. Next, No.2 transfer electrode 18, made of Al, etc., is formed on film 17. Lastly, by providing electrode 19 in P-type regions 13, 14, CCD of double gate structure is completed. Then, a fixed charge is injected from region 13 onto the surface of base 11. The injected charge is successibely transferred to region 14 by two-phase transfer pulses supplied to double- structure gates 16..., 18..., Finally, transferred signals are received by region 14. |
