发明名称 |
Method of passivating a semiconductor device utilizing dual polycrystalline layers |
摘要 |
A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat. The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.
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申请公布号 |
US4194934(A) |
申请公布日期 |
1980.03.25 |
申请号 |
US19790028836 |
申请日期 |
1979.04.10 |
申请人 |
VARO SEMICONDUCTOR INC |
发明人 |
BLASKE, THEODORE A;YU, HO Y |
分类号 |
H01L21/314;H01L21/3205;H01L23/31;(IPC1-7):H01L21/20;H01L29/04 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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