发明名称 |
PROCESS FOR PRODUCING LARGE-SIZE SUBSTRATE-BASED SEMICONDUCTOR MATERIAL |
摘要 |
A process for producing large-size, substratebased semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 .mu.m has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward. Large-sized plates obtained by cutting up the semiconductor material are used as solar cells. |
申请公布号 |
CA1074428(A) |
申请公布日期 |
1980.03.25 |
申请号 |
CA19760265373 |
申请日期 |
1976.11.10 |
申请人 |
WACKER-CHEMITRONIC GESELLESCHAFT FUER ELEKTRONIK-GRUNDSTOFFE M.B. |
发明人 |
AUTHIER, BERNHARD;GRIESSHAMMER, RUDOLF;KOEPPL, FRANZ;LANG, WINFRIED;SIRTL, ERHARD;RATH, HEINZ-JOERG |
分类号 |
H01L31/04;C30B13/00;C30B13/06;H01L21/205;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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