| 摘要 |
PURPOSE:To reduce the power consumption of a memory circuit with incorporated nonvolatile memory elements, by applying complementary MOS circuit technique. CONSTITUTION:First channel type insulation-gate transistors TRT11 and TRT21 and 2nd channel type insulation TRT31 are connected in series, and gates of TRT11 and TRT31 are connected to input terminal 51. Further, a couple of inverter circuits are provided which uses the gate of TRT21 as control terminal 61 and either the source or drain of it as output terminal 21. Then, one input terminal of this couple of inverter circuits is connected to the other and the control terminal is used in common to constitute a complementary bistable circuit. Then, connection points 21 and 22 of TRT11 and TRT21, nonvolatile memory elements M11 and M12 are connected. The CMOS circuit constitution like the reduce the power consumption of the memory circuit to a slight value.
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