| 摘要 |
Circuitry for programming a read-only memory comprising a plurality of decoding transistors of low current density for selecting the row of the programmable matrix and which function to operate a high current density control transistor through a large voltage swing for controlling an output transistor of the circuitry connected directly to the array. The decoding transistors are operable through a CML voltage swing in a non-saturated mode with minimum current to operate the control transistor of high current density from cut-off to saturation to turn the output transistor ON or OFF which in turn directs the high voltage from a high voltage source to the programmable memory.
|
