| 摘要 |
PURPOSE:To provide the subject method comprising the steps of: placing a cobalt or phosphorus plated film on a steel plate, and forming aganin a cobalt or phosphrus film on the plated film for a RF sputtering target to obtain a uniform film by simple operations. CONSTITUTION:After etching a copper plate which is to be used as a substrate with aqua regia, the plate is activated by use of plladium chloride, and a cobalt or phosphorus plated film of a thickness of from 20 to 30mum is formed thereon by a plating treatment. Then, said film as a target is subjected to RF sputtering under a pressure of 1X10<-1> Torr in a pure argon atmosphere to cause a cobalt or phosphorus film of a thickness of from 500 to 1200Angstrom to grow on the plated film. Since the formation of hard magnetic (meaning high coercive force) film is carried out in two steps as above described, the sputtered film comes to have a lustrous surface irrespective of smoothness in the target film surface, and furthermore have excellent characteristics such as coercive force, residual magnetization, saturation magnetization, rectangular ratio and the like. |
