| 摘要 |
PURPOSE:To improve the luminous efficiency by making a gentle slop distribution of impurity ion at around p-n joint part with injection of gallium ion into the p-n joint part when some impurity is injected, in the case of production of p-n type light emitting diode. CONSTITUTION:In the case of production of light emitting diode whose p-n junction is made with injection of impurity ion into compound semiconductor base where in the one compound element being gallium. The p-n junction is formed with injection of gallium ion when some impurity is injected. Further, with injection of both Ga and Zn ions, the generation of Ga hole is limited. As the resutls, the diffusion of Zn is abnormally multiplied, and a gentle slop distribution of acceptor concentration is obtained. With this distribution of impurity ion, the luminous efficiency is improved. |
