SELF-TERMINATING THERMAL OXIDATION OF AL-CONTAINING GROUP III-V COMPOUND LAYERS

摘要

An oxide layer (16") is formed on a GaAs body (14) by epitaxially growing a layer (12) of AlxGalxAs layer on a major surface (18) of the body and then thermally oxidizing the AlxGal-xAs layer for a time period effective to convert it to an oxide. The oxidizing process is essentially self-terminating at the major surface (18). The application of this process to the fabrication of MOS capacitors and IGFETS is described.