| 摘要 |
PURPOSE:To increase the degree of electric freedom for IC by providing a condenser of high capacity without enlarging the IC area. CONSTITUTION:A condenser 12 of high capacity is provided on a thick insulation film 13 to insulate against a transistor formed according to the conventional method. Electrodes 11 for the condenser are formed at both sides of a dielectric 12 with use of Al or the like. CVD SiO2 can be used as the insulation film 13 and dielectric 12. Then, PSG 9 and SiO2 10 are stacked thereon in turn to protect it. With this arrangement, over all area of IC can be used as a condenser and thus the high capacity condenser can be provided in IC. Therefore, this leads to the increase of the degree in electric freedom and realizes the reduction in size of circuits and simplification of manufacturing. |
