| 摘要 |
PURPOSE:To obtain high rectification efficiency with high-speed, low-voltage, large current operation, by manufacturing a composite semiconductor through the process consisting of providing a metallic electrode in contact with the source or drain electrode of a MOSFET and forming Schottky variable range between said substrate and metallic electrode. CONSTITUTION:An electrode 6 of Al for example is provided in contact with the source 3 of an Si substrate 1, and Schottky variable range 9 is formed between said electrode 6 and a substrate 1. If electrodes 5, 7 and 8 are interconnected, and voltage is applied on the clearances between said electrodes 5, 7 and 8 on one hand and an electrode 6 on the other, little current flows at reversely-biassed voltage, but channel current Ich flows at regularly-biassed voltage. Current ISB flows in range 9 at voltage VSB and, when voltage Vpn is reached, junction current Ipn is applied. Thus, this composite element can be utilized as rectifier element, current Ich flows at low voltage, and said two currents Ich and ISB depend on a majority carrier. Therefore, said composite element is free from time delay and suitable for high- speed operation, and further increases in current capacity at higher voltages than Vpn. |
