发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a semiconductor layer on one side of a semiconductor body to define a pn-junction therebetween, diffraction gratings formed at a distance from each other on the top of said semiconductor layer, and electrodes formed between the diffraction gratings on the top of said semiconductor and formed on the other side of the semiconductor body.
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申请公布号 |
US4194162(A) |
申请公布日期 |
1980.03.18 |
申请号 |
US19780889115 |
申请日期 |
1978.03.22 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO LTD |
发明人 |
UEMATSU, YUTAKA;UNNO, YOICHI |
分类号 |
G02B6/30;G02B5/18;G02B6/293;G02F1/35;H01L31/14;H01S5/00;H01S5/042;H01S5/187;(IPC1-7):H01S3/19 |
主分类号 |
G02B6/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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