发明名称 Semiconductor device
摘要 A semiconductor device includes a semiconductor layer on one side of a semiconductor body to define a pn-junction therebetween, diffraction gratings formed at a distance from each other on the top of said semiconductor layer, and electrodes formed between the diffraction gratings on the top of said semiconductor and formed on the other side of the semiconductor body.
申请公布号 US4194162(A) 申请公布日期 1980.03.18
申请号 US19780889115 申请日期 1978.03.22
申请人 TOKYO SHIBAURA ELECTRIC CO LTD 发明人 UEMATSU, YUTAKA;UNNO, YOICHI
分类号 G02B6/30;G02B5/18;G02B6/293;G02F1/35;H01L31/14;H01S5/00;H01S5/042;H01S5/187;(IPC1-7):H01S3/19 主分类号 G02B6/30
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