Infrared photolithographic process for constructing self-aligned electrodes

摘要

A process for constructing self-aligned electrodes overlying a surface of a semiconductor substrate is disclosed. The process utilizes a substrate which is substantially transparent to infrared radiation. One step of the process includes forming spaced apart ones of the electrodes with a conductive material that is highly absorbtive of infrared radiation. Subsequently, a continuous layer of heat sensitive polymer is formed over and between these spaced apart electrodes. The resulting structure is exposed to infrared radiation which heats the spaced apart electrodes. This heat polymerizes the heat sensitive polymer layer in all regions that directly overlie the spaced apart electrodes. These polymerized regions form a mask that is used to construct other electrodes between and in alignment with the spaced apart electrodes.