| 摘要 |
1324417 Semi-conductor devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 20 Aug 1970 [21 Aug 1969] 40146/70 Heading H1K A current switching element comprises a disc body composed of finely divided conductive particles disposed in a synthetic resin (Fig. 4, not shown), with electrodes disposed on opposite or on the same sides (Figs. 1, 2, not shown), having a high and a low resistance state, wherein increasing voltage is applied to the device in its high resistance state (Fig. 3) and current increases ohmically until a critical value is reached. The device then changes over to a low resistance state and current again increases ohmically with voltage. Reduction of voltage to point 21 causes changeover to the high resistance state and further reduction of voltage produces ohmic reduction of current to zero. The cycle may be repeated, and the device may receive a bias less than the first and greater than the second critical voltage so that a pulse of amplitude exceeding the first critical voltage initiates rapid changeover to the low resistance state until a similar negative pulse produces restoration of the high resistance state. The composition of the element is similar to that of Specification 1,324,416. |
