| 摘要 |
PURPOSE:To form an oxide layer, which is not polluted by impurities, while automatically controlling the thickness of the layer, by irradiating laser beams on an exposed surface of a semiconductor substrate installed in an oxidation atmosphere. CONSTITUTION:A fixed stage 10 provided with a circulation water passage 8 and a vacuum chuck portion 9 is mounted into a chamber 7, to which an inflow port 1a and an outflow port 1b of atmosphere gas, an incident window 3 of laser beams 2, to which quartz glass is installed, and a photo-window 6a for measuring the thickness of an oxide film 5 formed on a surface of a semiconductor substrate 4 by means of an optical lauer thickness meter 6 in an ellipso-metric shape are disposed. Laser beams 2 radiated from an argon laser light source 11 with 50W output are focussed on the surface of the semiconductor substrate 4 by means of a lens 12, reflected at the desired angles by means of reflectors 13a, 13b and scanned. Thus, the oxide layer 5 is not polluted by impurities, the accuracy of the thickness of the oxide layer 5 is within 5% and the thickness of the layer is easily controlled. |
