| 摘要 |
Sintered silicon carbide with a density of more than 95% is produced by hot pressing silicon carbide powder doped with 1 to 10% by weight of at least one element selected from elements of the first to the fourth periods, groups IIa, IIIb, VIa and VIII of the periodic table as an additive at 1,900 DEG to 2,050 DEG C under a pressure of 100 kg/cm<2> or higher in vacuum or in an inert gas atmosphere. The dopant is incorporated in the silicon carbide by addition to the raw materials used in the production of the silicon carbide by electric heating. |
