| 摘要 |
<p>PURPOSE:To accelerate response time and also to improve thermal stability and durability by using photodiodes in layer connected in series to opposite polarity each other. CONSTITUTION:A semiconductor layer 12 consists of P type semiconductor in Si group; N type semiconductor layer 13 consists of N type semiconductor in Si group which comes in PN junction with the semiconductor 12 along the semiconductor layer 12; P type semiconductor layer 14 consists of P type semiconductor in Si group which comes in PN junction with the semiconductor layer 13 along the semiconductor layer 13. Now, an output electrode 15 is provided along and also in contact with the semiconductor layer 14, light is radiated to a position selected on the PN junction through a radiating mechanism 16, and a potential on the semiconductor layer 12 corresponding to the position radiated as above is introduced to the output electrode 15. A response time can be accelerated eminently thereby and a thermal stability, durability, etc. can also be improved.</p> |
