发明名称 |
Thyristor with several semiconductor zones - has three zones one forming Schottky diode with its electrode, and middle zone forming gate |
摘要 |
<p>The zones are of different conduction types, and the outer zones have electrodes connected to a voltage source. A current flows between the outer electrodes, depending on a control signal applied through a control electrode to one of the inner zones. Three semiconductor zones (1-3) are provided. The first zone (1) outer electrode (4) forms with it a Schottky diode. The end electrode (K) on the third zone (3) forms with it a resistive contact, and the control terminal (G) is connected to a gate (6) provided on top of a thin insulating layer (5) covering the second zone (2).</p> |
申请公布号 |
DE2835076(A1) |
申请公布日期 |
1980.03.13 |
申请号 |
DE19782835076 |
申请日期 |
1978.08.10 |
申请人 |
SIEMENS AG |
发明人 |
ABLASSMEIER,ULRICH,DR.-ING. |
分类号 |
H01L27/06;H01L21/822;H01L29/417;H01L29/74;H01L29/749;(IPC1-7):01L29/74 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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