发明名称 Thyristor with several semiconductor zones - has three zones one forming Schottky diode with its electrode, and middle zone forming gate
摘要 <p>The zones are of different conduction types, and the outer zones have electrodes connected to a voltage source. A current flows between the outer electrodes, depending on a control signal applied through a control electrode to one of the inner zones. Three semiconductor zones (1-3) are provided. The first zone (1) outer electrode (4) forms with it a Schottky diode. The end electrode (K) on the third zone (3) forms with it a resistive contact, and the control terminal (G) is connected to a gate (6) provided on top of a thin insulating layer (5) covering the second zone (2).</p>
申请公布号 DE2835076(A1) 申请公布日期 1980.03.13
申请号 DE19782835076 申请日期 1978.08.10
申请人 SIEMENS AG 发明人 ABLASSMEIER,ULRICH,DR.-ING.
分类号 H01L27/06;H01L21/822;H01L29/417;H01L29/74;H01L29/749;(IPC1-7):01L29/74 主分类号 H01L27/06
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