| 摘要 |
PURPOSE:To enable the high-performance pattern transfer to enhance the effective sensitivity of a resist essentially consisting of fluorinated graphite by using said resist and subjecting the resist to UV or/and visible ray irradiation during the irradiation of X-rays. CONSTITUTION:A mask pattern 5 is irradiated by the X-rays generated from an X-ray source 1 and this mask pattern 5 is transferred to the resist 6. The surface of the resist 6 is irradiated via the mask pattern 5 by the luminous flux from an auxiliary light source 2 from the same direction as the direction of the X-ray source 1 during the X-ray irradiation at this time. The main compsn. of the resist 6 is constituted of the fluorinated graphite and the resist 6 is irradiated by the UV rays or/and visible rays during the X-ray irradiation to said pattern to form the pattern on the resist layer 6. The high-performance pattern transfer intensifying the effective sensitivity of the resist when the X-rays are used in particularly is thereby enabled. |
