SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MIS FIELD EFFECT TYPE TRANSISTOR AND ITS MANUFACTURE

摘要

PURPOSE:To heighten integration density as well as to accelerate performance speed by arranging three dimentionally thru separation insulating layer, the MIST electrodes of gate, source and drain respectively being formed by poly Si, and the lead connecting each electrode metal. CONSTITUTION:After establishing element region on the surface of p-type Si substrate 2 by forming thick SiO2 membrane 6 for separation purpose selectively thereon, gate insulation layer 8 and poly Si layer 16 are formed successively. Then, acid-proof masks 13-15 are selectively established, a part of Si layer 16 is removed by etching, and source 17 and drain 18 are provided within the substrate by ion impregnation. Poly Si layer 16 is acid treated leaving parts to become electrodes for gate 25, source 26 and drain 27 respectively, by which poly Si layer 16 is converted into SiO2 layer 29, and metal lead wires for gate 34, source 35 and drain 36 are connected to each poly Si electrode. Finally, insulating film 37 covering whole area is formed upon which lead 40 connecting drain lead is extended and provided.