| 摘要 |
PURPOSE:To make the formation of the high purity sputter film possible, by making the shield to be installed in the cathode of the same material as the target, or by coating the shield with the same material as the target. CONSTITUTION:The thermion emitted from the thermion emitting filament 16 is introduced into the vacuum vessel 10 and arrives at the anode 19. After evacuating the inside of the vessel 10 to high vacuum by the vacuum pump, the Ar gas for example, is introduced; hereby, the electric discharge is generated across the filament 16 and the anode 19 and the plasma is generated in the vessel 10. Under this condition, a minus voltage is impressed on the Ti target 11, for instance, in order to generate the sputtering, and the Ti film is formed on the substrate while the substrate holder 14 is being rotated. Hereupon, since the shield 12 is made of the same material as the target 11, or is coated with the same material as the target 11, even if the shield 12 receives the impact from the high energy neutral gas atom, the purity of the sputter film is never deteriorated. |
