| 发明名称 |
Process for removing layers of selenium |
| 摘要 |
A layer of selenium is removed from a metal base by contacting the layer with a fluid which contains an amine or a mercaptan at a temperature in the range between about 60 DEG and 150 DEG C. and then contacting the layer with an inert fluid at a temperature not exceeding 40 DEG C.
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| 申请公布号 |
US4192692(A) |
申请公布日期 |
1980.03.11 |
| 申请号 |
US19780909561 |
申请日期 |
1978.05.25 |
| 申请人 |
HOECHST AG |
发明人 |
HERRMANN, HEINZ |
| 分类号 |
C11D7/22;G03G5/00;G03G15/00;G03G21/00;(IPC1-7):B08B3/08 |
主分类号 |
C11D7/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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