发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:In a charged beam exposure, to use correction charged beams in the vicinities of corners of a pattern thereby to make it possible to form in a high precision an exposed pattern having corners each assuming an angle of less than 180 deg.. CONSTITUTION:The contour of an exposed pattern formed in the case where electron beams are irradiated on a photoresist corresponding to a square pattern is rounded at its four corners due to shortage in irradiation as shown by (c) in the drawing. When correction charged beams not exceeding an allowable charge quantity capable of showing the reaction of the resist are irradiated onto points P1, P2, P3 and P4, both charged beams are overlapped at the corner parts, and a pattern shown by (d) in the drawing is formed. As a result, an exposed pattern having corners each assuming an angle of less than 180 deg. can be formed by use of a charged beam exposing device at a high precision.
申请公布号 JPS5534413(A) 申请公布日期 1980.03.11
申请号 JP19780106187 申请日期 1978.09.01
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 SUGIYAMA HISASHI;SAITOU KAZUNORI
分类号 H01L21/027;H01J37/317 主分类号 H01L21/027
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