| 摘要 |
<p>PURPOSE:To heighten the accuracy of X-ray exposure as well as to enable joint use of optical and X-ray exposures by protruding a part of support beam of mask for X-ray exposure into the side of X-ray absorption layer pattern across the main plane of X-ray penetration layer and use it as a spacer. CONSTITUTION:A part of support beam 1 being formed by removing a part of Si single crystal substrate with (100) face as a main plane, is protruded into the X-ray absorbing layer 3 side which forms a desired pattern wherein a spacer 4 is formed. Thickness of spacer 4 is made thicker than the X-ray absorbing layer 3. Because spacer 4 is a unitary body together with a reinforcement member 1, its mechanical accuracy in size is precise, and the spacing between the wafer can be maintained at high accuracy by only making the spacer 4 contact lightly with the wafer to be processed. By so doing, joint use of optical and X-ray exposures as well as the heightening of accuracy in X-ray exposure are made feasible.</p> |
