| 摘要 |
PURPOSE:To increase electic power gain in high frequency and obtain good thermal coupling between a diode and a transistor by mounting a diode tip on an emitter metallized electrode and moreover shorting this electrode and an earth conductive layer. CONSTITUTION:On an insulation substrate 27 the whole back surface of which is composed of an earth conductive layer are mounted a base metallized electrode 13, a collector metallized electrode 8 a transistor tip 9 is soldered on and emitter metallized electrodes 10, 10' between which is put an electrode 8. These electrodes 10, 10' are electrically connected with a conductive layer through a through hole 28. The electrodes 10, 10' are jointed by a bridge 11 while an emitter electrode, a base electrode on the transistor tip 9 are connected with a bridge 11 and an electrode 13 respectively through bridges 12, 14. A diode tip 24 is mounted as near as possible to the transistor tip 9 acting as a heat source. In this method it is possible to increase power gain in high frequency and moreover improve thermal coupling between a diode and a transistor. |
