SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To carry out writing and reading operations effectively even at low voltage by having two gates and using a transistor turned ON by controlling the gates simultaneously, and a transistor controlled by one gate. CONSTITUTION:The semiconductor memory element comprises two gate of MOS transistor Q1 and a one gate MOS transistor Q2. The drain D1 of the transistor Q1 is connected to a bit line B1 and the source S1 is connected to the earth line. The first gate G11 is connected to the word line W and the second gate G12 is connected to the source S2 of the transistor Q2. The gate G2 of the transistor Q2 is connected to the work line W and the drain D2 is connected to the bit line B2.