| 摘要 |
PURPOSE:To compensate the fluctuation in the level of an output signal due to false charge which appears in the light reception region and charge storage region of a semiconductor substrate, by providing an output means and a row of light- shielded electrodes extending in parallel with the regions. CONSTITUTION:The light reception region 11 and the charge storage region 11 are provided in the semiconductor substrate so that these regions adjoins each other. Each of the regions is fitted with four electrodes 18 or 19, which constitute a single image element. The row of light-shielded electrode 13, 14 for two image elements is laid on one side of the regions 10, 11 so that the row extends continuously in the direction of a line. A reading region 12 is fitted with transfer electrodes 22 and a single-image-element electrode 15 located in the direction of extension of the row of electrodes 13, 14. An input source 16 and an input gate electrode 17 are provided on one end of the region 10. An input source 29 and an input gate electrode 21 are provided on one end of the region 12. An output gate electrode 5, a diffuse region 7, a reset gate electrode 23, a drain electrode 24 and an output FET 26 are provided on the other end of the region 12. The output 6 is picked out from a source follower load resistor 25. |
