| 摘要 |
<p>A data storage system (10) includes a charge coupled device shift register (12) and a detection circuit (20) for detecting the binary value represented by the charge level or signal within each cell location of the shift register. The detection circuit (20) includes a sense amplifier (30) for comparing the signals from two adjacent cell locations (b0, b1), with one signal representing a known binary value. The comparison of adjacent cell locations compensates for signal losses during shifting, since the losses experienced by adjacent cell locations are nearly identical. Switching transistors (40, 42) cause an adjustment voltage (Va) to be added to one of the signals prior to comparison. The output of the sense amplifier is provided to a flip-flop (32), which controls the switching transistors and is set to a predetermined state whenever a reference data item is located in the cell location (b0) providing the signal representing the known binary value. </p> |
