| 摘要 |
A p-n junction type solid-state element having a substrate, a substrate electrode coated on the substrate, a p-n junction type semiconductor layer coated on the substrate having the substrate electrode thereon, and an upper terminal electrode coated on the p-n junction type semiconductor layer; in which the p-n junction type semiconductor layer is formd by coating an n-type (or p-type) semiconductor layer on the substrate having the substrate electrode thereon by the ion-plating method and then by forming a p-type (or n-type) semiconductor layer in the upper surface region of the n-type (or p-type) seminconductor layer by the ion-implantation method. |
