| 摘要 |
A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10<10> to 10<15> ions cm<2>, and then heat-treating the implanted substrate at 850 DEG to 1250 DEG C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices.
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