| 摘要 |
PURPOSE:To simplize procedure and reduce area of memory cell by cutting off gate film photo etching procedure to smallize mask set room, in the production of MNOS non-volatile memory of Si gate. CONSTITUTION:SiO2 film 20 is formed on a Si basic plate 18 and first multicristal Si film 19 is selectively formed thereon and after taking off SiO2 film part esposed as mask, thin SiO2 film 21 is formed on the surface of the basic plate and thick SiO2 film 22 is formed on the surface of the first multicristal film by oxidation treatment. Then the thin SiO2 film 21 is taken off and at the same time a part of thick SiO2 film 22 is also taken off and after forming thin SiO2 film 23 which charge tunnel is possible on the surface of the basic plate, Si3N4 film 24 is formed on whole surface and second multicristal Si film 25 is formed adjacent to the first multicristal film 19. Whereby memory cell of 2 element/1 bit construction is formed in small area. |
