| 摘要 |
<p>For preheating a carrier in the form of a wire or filament of hyperpure silicon to a conduction temperature at which an electric current can be passed directly therethrough, a gaseous heat medium such as hydrogen is passed through the interstices of a heated aggregate of hyperpure silicon grains and is thereby both heated and freed from contaminants. The heat medium is then introduced into contact with the silicon carrier thereby preheating same to the conduction temperature. The thus preheated carrier is further heated to a precipitation temperature by direct passage of a current therethrough, and as a gaseous mixture of monosilane or trichlorosilane and hydrogen is the introduced into contact with the heated carrier, pure elementary silicon precipitates and grows thereon. The granular silicon aggregate can be filled in a vessel of high purity silicon or the like, with a heater provided exteriorly of the vessel for heating the silicon grains therethrough.</p> |
