Making semiconductor structure with improved phosphosilicate glass isolation

摘要

In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a dielectric layer of reflowed phosphosilicate glass (PSG) on top surfaces of a polycrystalline silicon layer which may be doped by phosphorous impurities diffusing from the PSG.