| 摘要 |
PURPOSE:To obtain a good ohmic electrode by providing an Au-Zn alloy film on a p layer of GaP having a pn joint, providing an n layer with an Au-Zn alloy which is heat-treated and finely processed, and then, covering an Au-Ge alloy film with a protective film and etching the Au-Zn alloy film selectively. CONSTITUTION:An Au-Ge alloy film 21a composed mainly of Au is provided on an n layer 21 of GaP having a pn joint and a p layer 22 is provided with an Au-Zn alloy film 22a composed mainly of Au, and after being heat-treated, they are made to contact GaP ohmically. The two alloy films are finely processed selectively with KCN solution so that emitted light is effectively radiated to outside. A mask is removed from the Au-Zn film and threated with the KCN solution to eliminate a compound oxide layer from the film. A mask is removed from the Au-Ge alloy film 22a, a lead 24 is joined onto the film 22a, the Au-Ge alloy film 21a is coated with an electroconductive adhesive 25 and a header 26 is installed. In this mechanism, it is possible to eliminate improper or defective joint because of absence of a compound oxide film, to prevent deterioration of light-emitting efficiency and discoloration to dark colors due to employment of the Au-Ge alloy and therefore to obtain a good ohmic electrode. |
