发明名称 MANUFACTURING OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent poor results from occurring by making material to be coated into atomized one, spraying it on a semiconductor to build an insulating film, and putting the semiconductor in an air-tight state. CONSTITUTION:As the under-coating material is, in almost all cases, coated in such a way that it encloses a pellet, such a method often transforms the wire connection and cause inferior characteristics because this type of coating is difficult. Therefore, if the PIQ resin is atomized and sprayed on the semiconductor, coating becomes easier, preventing the wire connection from being transformed, and inferiority in quality can be reduced when it is kept air-tight. Besides the spraying method, an insulating film may be built up according to the CVD method.
申请公布号 JPS5529109(A) 申请公布日期 1980.03.01
申请号 JP19780101781 申请日期 1978.08.23
申请人 HITACHI LTD 发明人 KOUNO YUKIO
分类号 H01L23/29;H01L23/31 主分类号 H01L23/29
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