This invention relates to a thin film of an amorphous magnetic material including ion-nitride having the formula FexN1-x, where x is from 0.4 to 0.7. The film is deposited on a substrate by sputter deposition in the presence of an inert gas and at a pressure from 25 mu m to 100 mu m. The coercivity of the magnetic material varies as a function of the gas pressure employed during sputtering.
申请公布号
NO792744(A)
申请公布日期
1980.02.29
申请号
NO19790002744
申请日期
1979.08.23
申请人
INTERNATIONAL BUSINESS MACHINES CORP,
发明人
ALBERT, PAUL ANDRE,;HEIMAN, NEIL DUANE,;POTTER, ROBERT IVAN,;WHITE, ROBERT LEE,