| 摘要 |
PURPOSE:To increase remarkably a storage capacitance to contrive an increasing in the integration of a DRAM without forming a through hole for increasing the lamination of a storage electrode by a method wherein the overhang-shaped storage electrode supported on the source and drain region on one side is formed. CONSTITUTION:A gate insulating film 3 and a gate 4 are formed in order on a semiconductor substrate 1 and an impurity having a conductivity type opposited to that of the substrate is introduced in the substrate on both sides of the gate to form source and drain regions 5. Then, an interlayer insulating film 6 and a film 6A are adhered in order on the whole surface of the substrate and an aperture is formed on the films 6 and 6A to expose the source and drain region on one side. Then, the aperture is covered with a storage electrode 7 to form the electrode 7 on the film 6A and the film 6A is etched away by an etching method, in which the etching speed of the film 6A is larger than those of the substrate, the film 6 and the electrode 7, to form a dielectric film 8A on the surface of the electrode 7. The film 8A is formed continuously up to the lower sides of the overhangs of the electrode 7. Moreover, an opposed electrode 9A is formed in contact to the film 8A. |
