| 摘要 |
PURPOSE:To detect the channel potential of a charge transfer element, by using a circuit in which MOS transistor, which has the same base concentration as the base concentration below an electrode of a charge transfer element, is connected in series with a high-impedance element. CONSTITUTION:When a pulse is supplied to charge supply source 2, the potential becomes VSH and VSL according to the high and low levels of the pulse. In Gate G1, the level of potential V1 is determined by DC bias VIB and input signal source 4. In gate G2, the level of V2 is determined by output voltage ADJ of DC voltage shift circuit shift circuit 5. When a pulse is supplied to gate G3 from pulse supply source 6, the potential becomes V3H and V3L according to the high and low levels of the pulse. Here, when the inner potential below gate G2 is higher than V3H, the quantity of charge to be transferred to CCD is in proportion to ''V1-V3H''. But, due to the drop of VADJ, it becomes proportional to ''V1-V2''. When V1=V2, CCD is cut off. |
