| 摘要 |
PURPOSE:To easily realize low-power consumption and high-speed IIL by providing a gradient for the impurity concentration of the base region of a horizontal-type transistor Tr from the neighborhood of the emitter so as to facilitate the carrier diffusion. CONSTITUTION:N-type semiconductor layer 2 is grown on N<+>-type base, and its surface is covered with Si oxide film 15 and Si nitride film 16. Windows 17 and 18 are formed on the region where emitter 3 and collector 4 of a horizontal type PNP Tr are to be formed by removing films 15 and 16. Then, Si oxide film 19 is formed and window 20 is provided. By this, P is diffused and base 13 of high N<+> concentration is formed. On top of this, film 19 is grown. Next, by removing film 19, P-type impurity is introduced from windows 17 and 18, and thereby No.1 and No.2 N<+>-type regions 3 and 4 are formed. Then, by selective diffusion, No.1 and No.2 N<+>-type regions 3 and 4 are formed inside No.2 P-type region, and then power source terminal 7, input terminal 8 and No.1 and No.2 output terminals 9 and 10 are provided. |
