| 摘要 |
<p>PURPOSE:To devide a wafer without special restrictions by forming a protective film in a plasma etching process at the boundary between an insulation film and a dicing line consisting of a thin film which is easily peeled off. CONSTITUTION:A pattern is formed by covering an internal wiring material such as alminum over a dicing line 8 and an oxidized film 6. In this process, a protective film 12 is formed in such a way that a part of or the entire internal wiring material is left on the boundary between the dicing line 8 and the oxidized film 6, but the internal wiring material is not allowed to remain on the center section of the dicing line 8.</p> |
