Trim structure for integrated capacitors

摘要

A capacitor suitable for integration into a monolithic integrated circuit is fabricated in two parallel connected sections. One section, using a thin oxide, constitutes most of the capacitance. A second section fabricated on a thick oxide constitutes a smaller capacitance per unit area but can be laser trimmed to provide a precise capacitance without damage to the integrated circuit. The trimmable section is desirably made using a conductive electrode material that is readily removed with laser energy.